US 11,798,936 B2
Electrostatic discharge circuits and methods for operating the same
Tzu-Heng Chang, New Taipei (TW); Hsin-Yu Chen, Hsinchu (TW); and Pin-Hsin Chang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Jun. 17, 2021, as Appl. No. 17/351,111.
Claims priority of provisional application 63/157,167, filed on Mar. 5, 2021.
Prior Publication US 2022/0285339 A1, Sep. 8, 2022
Int. Cl. H01L 27/02 (2006.01); H02H 9/04 (2006.01)
CPC H01L 27/0266 (2013.01) [H02H 9/046 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A circuit, comprising:
a first transistor including a drain, a source, a gate, and a bulk, the drain of the first transistor connected to a first terminal, the source of the first transistor connected to receive a first voltage, and the gate and the bulk of the first transistor connected to receive a second voltage lower than the first voltage;
a second transistor including a drain, a source, a gate, and a bulk, the source, the gate, and the bulk of the second transistor connected to receive the second voltage, and the drain of the second transistor connected to the first terminal,
wherein in response to the first terminal reaching a trigger voltage, the first transistor is configured to be turned on, and electrostatic charges are configured to be discharged through a first path including the first terminal, the drain of the first transistor, and the source of the first transistor.