US 11,798,899 B2
Crack stop ring trench to prevent epitaxy crack propagation
Jiun-Yu Chen, Hsinchu (TW); Chun-Lin Tsai, Hsin-Chu (TW); Yun-Hsiang Wang, Hsinchu (TW); Chia-Hsun Wu, Hsinchu (TW); Jiun-Lei Yu, Zhudong Township (TW); and Po-Chih Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 2, 2021, as Appl. No. 17/391,341.
Claims priority of provisional application 63/190,407, filed on May 19, 2021.
Prior Publication US 2022/0375875 A1, Nov. 24, 2022
Int. Cl. H01L 23/00 (2006.01); H01L 23/58 (2006.01); H01L 29/06 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/562 (2013.01) [H01L 23/585 (2013.01); H01L 25/0657 (2013.01); H01L 29/0657 (2013.01); H01L 2225/06541 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, comprising:
forming a group III-nitride (III-N) semiconductor material over a base silicon substrate at a first temperature;
cooling the group III-N semiconductor material and the base silicon substrate to a second temperature that is less than the first temperature, wherein cooling the group III-N semiconductor material and the base silicon substrate causes a plurality of cracks to form within a peripheral region of the group III-N semiconductor material, the peripheral region of the group III-N semiconductor material surrounding a central region of the group III-N semiconductor material; and
etching the group III-N semiconductor material and the base silicon substrate to form a crack stop ring trench that extends around the central region of the group III-N semiconductor material, wherein the crack stop ring trench separates the central region of the group III-N semiconductor material from the peripheral region of the group III-N semiconductor material.