US 11,798,856 B2
Ceramic/aluminum bonded body, insulating substrate, LED module, ceramic member, method for producing ceramic/aluminum bonded body, and method for producing insulating substrate
Nobuyuki Terasaki, Saitama (JP)
Assigned to MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
Appl. No. 16/482,018
Filed by MITSUBISHI MATERIALS CORPORATION, Tokyo (JP)
PCT Filed Feb. 6, 2018, PCT No. PCT/JP2018/003957
§ 371(c)(1), (2) Date Jul. 30, 2019,
PCT Pub. No. WO2018/143470, PCT Pub. Date Aug. 9, 2018.
Claims priority of application No. 2017-019737 (JP), filed on Feb. 6, 2017; and application No. 2018-009821 (JP), filed on Jan. 24, 2018.
Prior Publication US 2020/0006168 A1, Jan. 2, 2020
Int. Cl. H01L 23/15 (2006.01); B23K 1/00 (2006.01); C04B 37/02 (2006.01); H01L 23/14 (2006.01); H01L 33/64 (2010.01)
CPC H01L 23/15 (2013.01) [B23K 1/00 (2013.01); C04B 37/025 (2013.01); H01L 23/142 (2013.01); H01L 33/64 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A ceramic/aluminum bonded body comprising:
a ceramic member; and
an aluminum member formed of aluminum or an aluminum alloy,
wherein the ceramic member and the aluminum member are bonded to each other,
the ceramic member has a ceramic main body formed of silicon nitride, and an aluminum nitride layer or an aluminum oxide layer formed on a surface of the ceramic main body to which the aluminum member is bonded, and the aluminum member is bonded to the ceramic member through the aluminum nitride layer or the aluminum oxide layer,
the ceramic main body includes a glass phase,
Al is present in a portion of the glass phase of the ceramic main body at an interface with the aluminum nitride layer or the aluminum oxide layer,
a thickness of the aluminum nitride layer or the aluminum oxide layer is 4 to 100 nm, and
an amount of Al present in the glass phase is in a range of 35 atom % or more and 65 atom % or less when a total value of Al, Si, O, and N is 100 atom %.