CPC H01L 21/823468 (2013.01) [H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a first fin and a second fin, both extending in a first direction;
a fin end spacer extending in a second direction crossing the first direction and disposed between ends of the first and second fins;
gate electrodes disposed over the first and second fins, respectively; and
a dummy gate electrode over the fin end spacer,
wherein a width of the fin end spacer is greater than a width of the dummy gate electrode, wherein a space between the ends of the first fin and the second fin is greater than the width of the dummy gate electrode and smaller than the width of the fin end spacer, and wherein the dummy gate electrode does not overlap the first fin and the second fin.
|