US 11,798,848 B2
Semiconductor device structure with resistive element
Wen-Sheh Huang, Hsinchu (TW); Hsiu-Wen Hsueh, Taichung (TW); Yu-Hsiang Chen, Hsinchu (TW); and Chii-Ping Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Dec. 21, 2021, as Appl. No. 17/558,078.
Application 16/712,199 is a division of application No. 15/865,845, filed on Jan. 9, 2018, granted, now 10,515,852, issued on Dec. 24, 2019.
Application 17/558,078 is a continuation of application No. 16/712,199, filed on Dec. 12, 2019, granted, now 11,217,482.
Claims priority of provisional application 62/583,753, filed on Nov. 9, 2017.
Prior Publication US 2022/0130727 A1, Apr. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 27/06 (2006.01); H01L 21/311 (2006.01); H01L 49/02 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/31105 (2013.01); H01L 21/762 (2013.01); H01L 21/76811 (2013.01); H01L 27/0629 (2013.01); H01L 28/24 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a substrate;
a first dielectric layer over the substrate;
a first conductive feature and a second conductive feature surrounded by the first dielectric layer;
a second dielectric layer over the first dielectric layer;
a resistive element having a first portion over the second dielectric layer and a second portion penetrating through the second dielectric layer to be electrically connected to the first conductive feature; and
a conductive via penetrating through the second dielectric layer to be electrically connected to the second conductive feature, wherein the second portion of the resistive element is wider than the conductive via.