US 11,798,821 B2
Substrate processing apparatus, substrate processing method, and storage medium
Yukinobu Otsuka, Koshi (JP); Shinsuke Takaki, Koshi (JP); Yasuhiro Kuga, Koshi (JP); Koji Ushimaru, Koshi (JP); and Ryohei Fujise, Koshi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Oct. 16, 2020, as Appl. No. 17/72,457.
Claims priority of application No. 2019-190413 (JP), filed on Oct. 17, 2019; and application No. 2020-131948 (JP), filed on Aug. 3, 2020.
Prior Publication US 2021/0118707 A1, Apr. 22, 2021
Int. Cl. H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); F27B 17/00 (2006.01); G03F 7/16 (2006.01); F27D 3/00 (2006.01); H05B 3/22 (2006.01); H05B 1/02 (2006.01); F27D 5/00 (2006.01)
CPC H01L 21/67109 (2013.01) [F27B 17/0025 (2013.01); F27B 17/0083 (2013.01); F27D 3/0084 (2013.01); F27D 5/0037 (2013.01); G03F 7/168 (2013.01); H01L 21/6838 (2013.01); H01L 21/68742 (2013.01); H05B 1/0233 (2013.01); H05B 3/22 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and
a control unit configured to control the heat processing unit,
wherein the heat processing unit comprises:
a heater configured to support and heat the substrate;
a chamber configured to cover the substrate supported on the heater;
a gas ejector having a head in which a plurality of ejection holes scattered along a surface facing the substrate supported on the heater is formed, and configured to eject a gas from the plurality of ejection holes toward a surface of the substrate;
an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and
a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater,
wherein the chamber covers the substrate on the heater in a state in which a communication portion connecting the processing space and an external space of the chamber is formed in the outer peripheral region,
wherein the outer peripheral exhauster comprises an outer peripheral exhaust hole that is open to the communication portion, and evacuates the processing space through the outer peripheral exhaust hole and the communication portion,
wherein the chamber further comprises a holder configured to hold the heater, and a lid arranged in a state in which a gap is provided between the holder and the lid so as to cover the substrate on the heater from above, and
wherein the gap between the holder and the lid functions as the communication portion.