CPC H01J 37/32724 (2013.01) [B08B 3/08 (2013.01); B08B 5/00 (2013.01); B08B 13/00 (2013.01); H01L 21/0206 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01)] | 17 Claims |
1. A substrate processing method comprising:
(a) disposing a substrate on a substrate support provided in a chamber of a substrate processing apparatus;
(b) supplying a processing gas including hydrogen fluoride gas into the chamber;
(c) controlling a temperature of the substrate support to a first temperature, and a pressure of the hydrogen fluoride gas in the chamber to a first pressure; and
(d) controlling the temperature of the substrate support to a second temperature, and the pressure of the hydrogen fluoride gas in the chamber to a second pressure,
wherein in a graph with a horizontal axis indicating a temperature and a vertical axis indicating a pressure, the first temperature and the first pressure are positioned in a first region above an adsorption equilibrium pressure curve of hydrogen fluoride, and the second temperature and the second pressure are positioned in a second region below the adsorption equilibrium pressure curve, and
wherein the first temperature and the second temperature are in a range of −140° C. or higher and 0° C. or lower, and the first pressure and the second pressure are in a range of 1 Pa or more and 1×105 Pa or less.
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