CPC H01J 37/32174 (2013.01) [H01J 37/32146 (2013.01)] | 13 Claims |
1. A plasma processing apparatus comprising:
a plasma processing chamber;
a substrate support disposed in the plasma processing chamber;
an antenna disposed on or above the plasma processing chamber;
a source RF generator configured to generate a source RF pulsed signal, the source RF pulsed signal including at least three power levels, each power level being zero or more;
a first bias RF generator configured to generate a first bias RF pulsed signal, the first bias RF pulsed signal including at least two power levels, each power level being zero or more;
a second bias RF generator configured to generate a second bias RF pulsed signal, the second bias RF pulsed signal including at least two power levels, each power level being zero or more;
a synchronization signal generator configured to generate a synchronization signal for synchronizing the source RF generator, the first bias RF generator, and the second bias RF generator with each other;
a first matching circuit connected to the source RF generator and the antenna, thereby allowing the source RF pulsed signal to be supplied from the source RF generator to the antenna through the first matching circuit; and
a second matching circuit connected to the first bias RF generator, the second bias RF generator and the substrate support, thereby allowing the first bias RF pulsed signal to be supplied from the first bias RF generator to the substrate support through the second matching circuit, and allowing the second bias RF pulsed signal to be supplied from the second bias RF generator to the substrate support through the second matching circuit.
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