US 11,798,786 B2
Power converter, power supply system and HF plasma system
Andrzej Klimczak, Warsaw (PL); Konrad Lewandowski, Kobylka (PL); and Marcin Golan, Warsaw (PL)
Assigned to TRUMPF HUETTINGER SP. Z O. O., Zielonka (PL)
Filed by TRUMPF Huettinger Sp. z o. o., Zielonka (PL)
Filed on Jan. 29, 2021, as Appl. No. 17/161,808.
Application 17/161,808 is a continuation of application No. PCT/EP2019/070375, filed on Jul. 29, 2019.
Claims priority of application No. 18461598 (EP), filed on Aug. 2, 2018.
Prior Publication US 2021/0159050 A1, May 27, 2021
Int. Cl. H01J 37/32 (2006.01); H03F 3/21 (2006.01); H03F 3/217 (2006.01)
CPC H01J 37/32174 (2013.01) [H03F 3/2176 (2013.01)] 44 Claims
OG exemplary drawing
 
1. A power converter configured to generate a high-frequency power signal for a plasma process, the power converter comprising: at least one amplifier stage having first and second amplifier paths each having an amplifier, the first amplifier path outputting a first amplifier path output signal and the second amplifier path outputting a second amplifier path output signal that has a phase shift relative to the first amplifier output signal greater than 0° and less than 180°; a voltage supply configured to supply voltage to the first and second amplifier paths; an output connector configured to output the high-frequency power signal to a plasma load connected to the output connector; a first circuitry configured to perform a wideband measurement of the signal at the output connector a second circuitry configured to control the voltage supply in response to a received signal from the first circuitry, wherein the second circuitry is connected to the first circuitry; an absorbing resistor, wherein a phase shifting coupler is connected to ground via the absorbing resistor; and a third circuitry configured to measure data relating to the absorbing resistor, wherein the first and second amplifier paths are connected to the phase-shifting coupler that is configured to couple the first and second amplifier path output signals to form the high-frequency power signal, wherein at least one of the amplifiers of the first and second amplifier paths comprises a SiC MOSFET.