CPC H01J 37/32174 (2013.01) [H03F 3/2176 (2013.01)] | 44 Claims |
1. A power converter configured to generate a high-frequency power signal for a plasma process, the power converter comprising: at least one amplifier stage having first and second amplifier paths each having an amplifier, the first amplifier path outputting a first amplifier path output signal and the second amplifier path outputting a second amplifier path output signal that has a phase shift relative to the first amplifier output signal greater than 0° and less than 180°; a voltage supply configured to supply voltage to the first and second amplifier paths; an output connector configured to output the high-frequency power signal to a plasma load connected to the output connector; a first circuitry configured to perform a wideband measurement of the signal at the output connector a second circuitry configured to control the voltage supply in response to a received signal from the first circuitry, wherein the second circuitry is connected to the first circuitry; an absorbing resistor, wherein a phase shifting coupler is connected to ground via the absorbing resistor; and a third circuitry configured to measure data relating to the absorbing resistor, wherein the first and second amplifier paths are connected to the phase-shifting coupler that is configured to couple the first and second amplifier path output signals to form the high-frequency power signal, wherein at least one of the amplifiers of the first and second amplifier paths comprises a SiC MOSFET.
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