CPC G06F 30/392 (2020.01) [G06F 30/398 (2020.01); H01L 27/0207 (2013.01)] | 20 Claims |
1. A method of forming a semiconductor device, the method comprising:
forming cell regions in alternating first and second rows extending substantially parallel to a first direction;
relative to a second direction substantially perpendicular to the first direction, the first and second rows having corresponding first and second heights;
the forming cell regions including:
forming a majority of the cell regions correspondingly in the first rows, the forming a majority of the cell regions including:
relative to the second direction, limiting a height of the majority of the cell regions to be single-row cell regions that span a corresponding single one of the first rows but do not extend therebeyond; and
forming a minority of the cell regions correspondingly in at least the first rows, the forming a minority of the cell regions including:
expanding heights of the minority of the cell regions to be multi-row cell regions that correspondingly span multiple rows, each of the multi-row cell regions spanning a corresponding single one of the first rows and at least a corresponding one of the second rows such that cell region densities of the second rows are at least about forty percent.
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