US 11,797,746 B2
Method of forming semiconductor device having more similar cell densities in alternating rows
Wei-Cheng Lin, Hsinchu (TW); Hui-Ting Yang, Hsinchu (TW); Jiann-Tyng Tzeng, Hsinchu (TW); Lipen Yuan, Hsinchu (TW); and Wei-An Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jul. 14, 2022, as Appl. No. 17/865,272.
Application 17/865,272 is a continuation of application No. 17/131,128, filed on Dec. 22, 2020, granted, now 11,409,937.
Application 17/131,128 is a continuation of application No. 16/502,869, filed on Jul. 3, 2019, granted, now 10,878,158, issued on Dec. 29, 2020.
Claims priority of provisional application 62/698,464, filed on Jul. 16, 2018.
Prior Publication US 2022/0374577 A1, Nov. 24, 2022
Int. Cl. H01L 27/02 (2006.01); G06F 30/392 (2020.01); G06F 30/398 (2020.01)
CPC G06F 30/392 (2020.01) [G06F 30/398 (2020.01); H01L 27/0207 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor device, the method comprising:
forming cell regions in alternating first and second rows extending substantially parallel to a first direction;
relative to a second direction substantially perpendicular to the first direction, the first and second rows having corresponding first and second heights;
the forming cell regions including:
forming a majority of the cell regions correspondingly in the first rows, the forming a majority of the cell regions including:
relative to the second direction, limiting a height of the majority of the cell regions to be single-row cell regions that span a corresponding single one of the first rows but do not extend therebeyond; and
forming a minority of the cell regions correspondingly in at least the first rows, the forming a minority of the cell regions including:
expanding heights of the minority of the cell regions to be multi-row cell regions that correspondingly span multiple rows, each of the multi-row cell regions spanning a corresponding single one of the first rows and at least a corresponding one of the second rows such that cell region densities of the second rows are at least about forty percent.