US 11,796,919 B2
Resist pattern formation method
Seiichi Tagawa, Suita (JP)
Assigned to OSAKA UNIVERSITY, Osaka (JP)
Appl. No. 17/251,722
Filed by OSAKA UNIVERSITY, Osaka (JP)
PCT Filed Jun. 14, 2019, PCT No. PCT/JP2019/023750
§ 371(c)(1), (2) Date Dec. 11, 2020,
PCT Pub. No. WO2019/240279, PCT Pub. Date Dec. 19, 2019.
Claims priority of application No. 2018-113560 (JP), filed on Jun. 14, 2018.
Prior Publication US 2021/0216016 A1, Jul. 15, 2021
Int. Cl. G03F 7/38 (2006.01)
CPC G03F 7/38 (2013.01) 12 Claims
OG exemplary drawing
 
1. A resist pattern formation method comprising:
forming a resist layer on a substrate, the resist layer containing a base resin, a sensitizer precursor, an acid generator, and a base;
allowing a portion of an acid to be neutralized with the base through pattern exposure on the resist layer, the acid being generated from the acid generator by the pattern exposure;
generating, after the pattern exposure, a sensitizer from the sensitizer precursor by performing heating of the resist layer in presence of the acid generated by the pattern exposure in the resist layer;
generating, after the heating of the resist layer, an acid from the acid generator by performing flood exposure on the resist layer in which the sensitizer has been generated;
performing heat treatment on the resist layer after the flood exposure; and
developing the resist layer after the heat treatment, wherein
in the heating of the resist layer, the resist layer is heated such that a size of a region of the resist layer in which the sensitizer is to be generated after the heating of the resist layer is equal to or smaller than a size of a region of the resist layer in which the acid has been generated by the pattern exposure.