	US 11,796,918 B2
	Underlayer material for photoresist
An-Ren Zi, Hsinchu (TW); Wei-Han Lai, New Taipei (TW); and Ching-Yu Chang, Yilang County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Mar. 8, 2022, as Appl. No. 17/689,103.
Application 17/689,103 is a continuation of application No. 16/915,421, filed on Jun. 29, 2020, granted, now 11,269,256.
Application 16/915,421 is a continuation of application No. 15/903,796, filed on Feb. 23, 2018, granted, now 10,698,317, issued on Jun. 30, 2020.
Prior Publication US 2022/0187711 A1, Jun. 16, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/20 (2006.01); G03F 7/16 (2006.01); G03F 7/09 (2006.01); G03F 7/075 (2006.01); G03F 7/11 (2006.01); G03F 7/095 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01)

CPC G03F 7/2022 (2013.01) [G03F 7/091 (2013.01); G03F 7/162 (2013.01); G03F 7/203 (2013.01); G03F 7/0752 (2013.01); G03F 7/094 (2013.01); G03F 7/095 (2013.01); G03F 7/11 (2013.01); G03F 7/2041 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01)]

20 Claims

1. A method comprising:

forming a hard mask layer on a substrate;

forming a material layer on the hard mask layer, wherein the material layer includes a first acid-generating molecule sensitive to radiation having a first wavelength;

forming a photoresist layer on the material layer, wherein the photoresist layer includes a second acid-generating molecule sensitive to radiation having a second wavelength;

performing a first exposure process on the material layer and the photoresist layer, wherein the performing of the first exposure process is implemented using radiation of the first wavelength;

performing a second exposure process on the material layer and the photoresist layer, wherein the performing of the second exposure process is implemented using radiation of the second wavelength; and

developing the photoresist layer to form a patterned photoresist layer.