US 11,796,735 B2
Integrated 3DIC with stacked photonic dies and method forming same
Chen-Hua Yu, Hsinchu (TW); and Hsing-Kuo Hsia, Jhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 19, 2022, as Appl. No. 17/648,375.
Claims priority of provisional application 63/231,051, filed on Aug. 9, 2021.
Claims priority of provisional application 63/218,671, filed on Jul. 6, 2021.
Prior Publication US 2023/0012157 A1, Jan. 12, 2023
Int. Cl. G02B 6/12 (2006.01); G02B 6/136 (2006.01)
CPC G02B 6/12002 (2013.01) [G02B 6/12004 (2013.01); G02B 6/136 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first photonic die comprising:
forming a first silicon waveguide; and
forming a first nitride waveguide;
forming a first through-via extending into a first plurality of dielectric layers in the first photonic die;
bonding a second photonic die to the first photonic die, wherein the second photonic die comprises:
a second nitride waveguide, wherein the first silicon waveguide is optically coupled to the second nitride waveguide through the first nitride waveguide;
forming a second through-via extending into a second plurality of dielectric layers in the second photonic die; and
bonding an electronic die to the first photonic die, wherein the second through-via is electrically coupled to the electronic die through the first through-via, and wherein the electronic die comprises circuits for processing electrical signals from the first photonic die.