CPC G01R 33/07 (2013.01) [H10N 52/01 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02)] | 16 Claims |
1. An integrated sensor device comprising:
a semiconductor substrate comprising a first horizontal Hall element;
a first integrated magnetic flux concentrator located above said first horizontal Hall element;
wherein the first magnetic flux concentrator has a shape with a geometric center which is vertically aligned with a geometric centre of the horizontal Hall element in a direction perpendicular to the semiconductor substrate; and
wherein the shape has a height in the direction perpendicular to the semiconductor substrate, and has a largest transversal dimension in a direction parallel to the semiconductor substrate; and
wherein the height of the magnetic flux concentrator is at least 30 μm, and/or wherein a ratio of the height and said largest transversal dimension is at least 25%.
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