US 11,796,609 B2
Magnetic sensor device
Yves Bidaux, Bevaix (CH); and Lionel Tombez, Bevaix (CH)
Assigned to MELEXIS TECHNOLOGIES SA, Bevaix (CH)
Filed by Melexis Technologies SA, Bevaix (CH)
Filed on Oct. 20, 2021, as Appl. No. 17/506,098.
Claims priority of application No. 20205330 (EP), filed on Nov. 3, 2020.
Prior Publication US 2022/0137161 A1, May 5, 2022
Int. Cl. G01R 33/07 (2006.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01); H10N 52/00 (2023.01)
CPC G01R 33/07 (2013.01) [H10N 52/01 (2023.02); H10N 52/101 (2023.02); H10N 52/80 (2023.02)] 16 Claims
OG exemplary drawing
 
1. An integrated sensor device comprising:
a semiconductor substrate comprising a first horizontal Hall element;
a first integrated magnetic flux concentrator located above said first horizontal Hall element;
wherein the first magnetic flux concentrator has a shape with a geometric center which is vertically aligned with a geometric centre of the horizontal Hall element in a direction perpendicular to the semiconductor substrate; and
wherein the shape has a height in the direction perpendicular to the semiconductor substrate, and has a largest transversal dimension in a direction parallel to the semiconductor substrate; and
wherein the height of the magnetic flux concentrator is at least 30 μm, and/or wherein a ratio of the height and said largest transversal dimension is at least 25%.