US 11,795,575 B2
Optimized heteroepitaxial growth of semiconductors
Vladimir Tassev, Beavercreek, OH (US)
Assigned to United States of America as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)
Filed by Government of the United States, as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US)
Filed on Oct. 17, 2022, as Appl. No. 18/46,946.
Application 18/046,946 is a division of application No. 17/094,878, filed on Nov. 11, 2020.
Application 17/094,878 is a division of application No. 16/201,446, filed on Nov. 27, 2018, abandoned.
Claims priority of provisional application 62/681,155, filed on Jun. 6, 2018.
Prior Publication US 2023/0095501 A1, Mar. 30, 2023
Int. Cl. C30B 25/04 (2006.01); H01L 21/02 (2006.01); C30B 29/44 (2006.01); C30B 29/40 (2006.01); C30B 25/18 (2006.01); G02F 1/355 (2006.01); C30B 29/42 (2006.01); C30B 29/48 (2006.01); C30B 25/02 (2006.01); H01L 31/18 (2006.01)
CPC C30B 25/04 (2013.01) [C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/42 (2013.01); C30B 29/44 (2013.01); C30B 29/48 (2013.01); G02F 1/3556 (2013.01); H01L 21/024 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02293 (2013.01); H01L 21/02387 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02398 (2013.01); H01L 21/02458 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02505 (2013.01); H01L 21/02538 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02551 (2013.01); H01L 21/02568 (2013.01); H01L 21/02658 (2013.01); H01L 31/1828 (2013.01); G02F 1/3558 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A method of performing heteroepitaxy, comprising:
exposing a substrate to
a carrier gas,
a first precursor gas,
a Group II/III element, and
additional precursor gasses to form a heteroepitaxial growth of directly on the substrate;
wherein the substrate comprises;
wherein the carrier gas is H2,
wherein the first precursor gas is HCl,
the Group II/III element comprises; and
wherein the additional precursor gasses comprise PH3 (phosphine) and H2S (hydrogen sulfide);
flowing the carrier gas over the Group II/III element;
exposing the substrate to the additional precursor gasses in a predetermined ratio of first additional precursor gas to second additional precursor gas (1tf:2tf ratio); and
changing the 1tf:2tf ratio over time.