CPC C30B 25/04 (2013.01) [C30B 25/02 (2013.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); C30B 29/42 (2013.01); C30B 29/44 (2013.01); C30B 29/48 (2013.01); G02F 1/3556 (2013.01); H01L 21/024 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02293 (2013.01); H01L 21/02387 (2013.01); H01L 21/02389 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02398 (2013.01); H01L 21/02458 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02466 (2013.01); H01L 21/02505 (2013.01); H01L 21/02538 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02551 (2013.01); H01L 21/02568 (2013.01); H01L 21/02658 (2013.01); H01L 31/1828 (2013.01); G02F 1/3558 (2013.01)] | 3 Claims |
1. A method of performing heteroepitaxy, comprising:
exposing a substrate to
a carrier gas,
a first precursor gas,
a Group II/III element, and
additional precursor gasses to form a heteroepitaxial growth of directly on the substrate;
wherein the substrate comprises;
wherein the carrier gas is H2,
wherein the first precursor gas is HCl,
the Group II/III element comprises; and
wherein the additional precursor gasses comprise PH3 (phosphine) and H2S (hydrogen sulfide);
flowing the carrier gas over the Group II/III element;
exposing the substrate to the additional precursor gasses in a predetermined ratio of first additional precursor gas to second additional precursor gas (1tf:2tf ratio); and
changing the 1tf:2tf ratio over time.
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