US 11,795,394 B2
Quantum dot composite material, preparation method, and semiconductor device
Lei Qian, Huizhou (CN); Yixing Yang, Huizhou (CN); and Zheng Liu, Huizhou (CN)
Assigned to TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Filed by TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Filed on Nov. 11, 2021, as Appl. No. 17/524,347.
Application 17/524,347 is a continuation of application No. 15/762,146, filed on Mar. 22, 2018, granted, now 11,203,715.
Application 15/762,146 is a continuation of application No. PCT/CN2017/080615, filed on Apr. 14, 2017.
Claims priority of application No. 201611255822.X (CN), filed on Dec. 30, 2016.
Prior Publication US 2022/0064529 A1, Mar. 3, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C09K 11/88 (2006.01); H10K 50/115 (2023.01); C09K 11/56 (2006.01); B82Y 30/00 (2011.01); H10K 50/15 (2023.01); H10K 50/16 (2023.01); H10K 50/17 (2023.01); H10K 85/10 (2023.01); H10K 85/60 (2023.01); H10K 102/00 (2023.01); H10K 102/10 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); H01L 31/0352 (2006.01)
CPC C09K 11/883 (2013.01) [C09K 11/565 (2013.01); H10K 50/115 (2023.02); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01L 31/035218 (2013.01); H10K 50/15 (2023.02); H10K 50/16 (2023.02); H10K 50/17 (2023.02); H10K 85/111 (2023.02); H10K 85/1135 (2023.02); H10K 85/146 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02); H10K 2102/00 (2023.02); H10K 2102/103 (2023.02); H10K 2102/321 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A method for preparing a quantum dot (QD) composite material, comprising:
synthesizing a first compound;
synthesizing a second compound on a surface of the first compound, wherein the second compound and the first compound have different alloy compositions; and
forming the QD composite material through a cation exchange reaction between the first compound and the second compound, wherein a light-emission peak wavelength of the QD composite material experiences an unchanged part and then blue-shift,
wherein:
the QD composite material includes at least two QD structural units arranged sequentially along a radial direction;
the at least two structural units include a type A1 structural unit and a type A2 structural unit, wherein the type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface; and
the two types of QD structural units are arranged alternately along the radial direction, the energy levels in adjacent QD structural units having gradient alloy composition structures am continuous,
and wherein:
the cation exchange reaction between the first compound and the second compound is performed under a heating condition;
a heating temperature is in a range of approximately 100° C. to 400° C.; and
a heating time is in a range of approximately 2 seconds to 24 hours.