US 11,795,347 B2
Polishing slurry and method of manufacturing semiconductor device
Kenji Takai, Hwaseong-si (KR); Eigo Miyazaki, Hwaseong-si (KR); and Do Yoon Kim, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 22, 2022, as Appl. No. 17/676,928.
Application 17/676,928 is a continuation of application No. 16/750,060, filed on Jan. 23, 2020, granted, now 11,254,840.
Claims priority of application No. 10-2019-0028738 (KR), filed on Mar. 13, 2019.
Prior Publication US 2022/0177728 A1, Jun. 9, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A polishing slurry comprising a nanocarbon particle having a nitrogen-containing functional group,
wherein a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle expressed as N/C×100% is greater than or equal to about 5 wt %.