US 11,795,053 B2
Sensor devices with gas-permeable cover and associated production methods
Rainer Markus Schaller, Saal an der Donau (DE); Klaus Elian, Alteglofsheim (DE); and Horst Theuss, Wenzenbach (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Mar. 30, 2021, as Appl. No. 17/217,488.
Claims priority of application No. 102020110790.0 (DE), filed on Apr. 21, 2020.
Prior Publication US 2021/0323812 A1, Oct. 21, 2021
Int. Cl. B81B 7/00 (2006.01); B81C 1/00 (2006.01)
CPC B81B 7/0051 (2013.01) [B81C 1/00325 (2013.01); B81B 2203/033 (2013.01); B81B 2207/07 (2013.01); B81B 2207/096 (2013.01); B81C 2203/0118 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A sensor device, comprising:
a sensor chip comprising a semiconductor material having a main surface, and a micro-electromechanical systems (MEMS) structure integrated in the semiconductor material at the main surface of the semiconductor material, wherein the MEMS structure resides within the semiconductor material of the sensor chip,
wherein the semiconductor material comprises one or more trenches that extend from the main surface of the semiconductor material into the semiconductor material,
wherein the one or more trenches laterally surround the MEMS structure within the semiconductor material; and
a gas-permeable cover which is arranged over the main surface of the semiconductor material and covers the MEMS structure, thereby forming a cavity above the MEMS structure, between the MEMS structure and the gas-permeable cover.