US 12,453,293 B2
Redundant bottom pad and sacrificial via contact for process induced RRAM forming
Youngseok Kim, Upper Saddle River, NJ (US); Takashi Ando, Eastchester, NY (US); Hiroyuki Miyazoe, White Plains, NY (US); Soon-Cheon Seo, Glenmont, NY (US); and Dexin Kong, Redmond, WA (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 29, 2021, as Appl. No. 17/564,331.
Prior Publication US 2023/0210025 A1, Jun. 29, 2023
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/041 (2023.02) [H10B 63/30 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A resistive memory comprising:
a bottom electrode;
a first contact on the bottom electrode;
a switching material pad on the first contact, wherein the switching material pad includes an oxide and a plurality of current conducting filaments in the oxide;
a top electrode on the switching material pad;
a plurality of sacrificial vias contacting the bottom electrode;
a second contact that is connected to the bottom electrode; and
a third contact that is connected to the top electrode.