US 12,453,291 B2
Semiconductor die with sensor section located at the edge
Momtchil Stavrev, Dresden (DE); and Dirk Meinhold, Dresden (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 25, 2021, as Appl. No. 17/445,858.
Claims priority of application No. 102020122871.6 (DE), filed on Sep. 1, 2020.
Prior Publication US 2022/0069203 A1, Mar. 3, 2022
Int. Cl. H10N 52/00 (2023.01); B81B 3/00 (2006.01); H10N 52/80 (2023.01)
CPC H10N 52/101 (2023.02) [B81B 3/0032 (2013.01); H10N 52/80 (2023.02); B81B 2201/0264 (2013.01); B81B 2201/0292 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor die comprising:
a microelectronic section,
wherein the microelectronic section comprises an integrated circuit; and
a sensor section,
wherein a first side of the sensor section adjoins an edge of the semiconductor die,
wherein a step formed by a plurality of metallization layers of the microelectronic section is present only on a second side of the sensor section that is opposite of the first side of the sensor section,
wherein the sensor section is configured to be positioned above a mounting surface of a housing,
wherein the sensor section is free of any wetting by an adhesive that mechanically connects the semiconductor die to the mounting surface of the housing, and
wherein a barrier prevents a mechanical connection from being produced between the sensor section and the mounting surface of the housing when the semiconductor die is mounted on the mounting surface of the housing.