| CPC H10K 59/1315 (2023.02) [H10K 71/00 (2023.02); G09G 3/3233 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0842 (2013.01); H10K 59/1201 (2023.02)] | 20 Claims |
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1. A display apparatus comprising:
a substrate;
a transistor on the substrate, including:
a semiconductor layer including an oxide semiconductor, a channel region and a first region which extends from the channel region to define a first edge of the semiconductor layer;
within the semiconductor layer, an electrical resistance of the first region lower than an electrical resistance of the channel region;
a first inorganic insulating layer covering the semiconductor layer and defining a first contact hole which overlaps the first region;
a first electrode on the first inorganic insulating layer and electrically connected to the first region of the semiconductor at the first contact hole in the first inorganic insulating layer; and
a gate electrode on the first inorganic insulating layer and overlapping the channel region;
a second inorganic insulating layer covering the first electrode and the gate electrode of the transistor;
a capacitor electrically connected to the transistor, the capacitor comprising a first capacitor electrode, a second capacitor electrode and a third capacitor electrode which overlap each other, wherein
the second capacitor electrode comprises a same material as the first region of the semiconductor layer,
the first capacitor electrode is below the second capacitor electrode, and
the third capacitor electrode is above the second capacitor electrode and is electrically connected to the first capacitor electrode, and
a display element which is on the second inorganic insulating layer and connected to the transistor.
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