US 12,453,235 B2
Light-emitting diode comprising composite film between electron transport layer and cathode and preparation method thereof
Tianshuo Zhang, Guangdong (CN)
Assigned to TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Filed by TCL TECHNOLOGY GROUP CORPORATION, Guangdong (CN)
Filed on Sep. 27, 2022, as Appl. No. 17/935,701.
Application 17/935,701 is a continuation of application No. PCT/CN2021/140130, filed on Dec. 21, 2021.
Claims priority of application No. 202011548093.3 (CN), filed on Dec. 24, 2020.
Prior Publication US 2023/0038312 A1, Feb. 9, 2023
Int. Cl. H10K 50/16 (2023.01); H10K 50/115 (2023.01); H10K 50/17 (2023.01); H10K 71/00 (2023.01); H10K 71/40 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/16 (2023.02) [H10K 50/115 (2023.02); H10K 50/171 (2023.02); H10K 71/00 (2023.02); H10K 71/40 (2023.02); H10K 2102/00 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A light-emitting diode, comprising: an anode and a cathode which are arranged opposite to each other, a luminescent layer arranged between the anode and the cathode, an electron transport layer arranged between the cathode and the luminescent layer, and a composite film arranged between the cathode and the electron transport layer, wherein the composite film comprises an aluminum oxide film arranged adjacent to the electron transport layer, and a nano metal oxide film or a silicon nitride film arranged away from the electron transport layer;
wherein a material of the nano metal oxide film comprises at least one of TiO2, ZrO2, and SiO2, and a material of the electron transport layer comprises ZnO, Aluminum-doped zinc oxide, lithium-doped zinc oxide and magnesium-doped zinc oxide.