US 12,453,220 B2
Light emitting diode with conductive encapsulation and method of making thereof
Brian Kim, Santa Clara, CA (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 8, 2022, as Appl. No. 17/818,097.
Claims priority of provisional application 63/238,959, filed on Aug. 31, 2021.
Prior Publication US 2023/0066558 A1, Mar. 2, 2023
Int. Cl. H10H 20/854 (2025.01); H10H 20/01 (2025.01); H10H 20/814 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/854 (2025.01) [H10H 20/01 (2025.01); H10H 20/814 (2025.01); H10H 29/142 (2025.01); H10H 20/0362 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a backplane;
an array of light emitting diodes attached to a front side of the backplane, wherein each of the array of light emitting diodes comprises a stack of a first doped semiconductor layer, a second doped semiconductor layer, and an active region located between the first and the second doped semiconductor layers; and
a conductive encapsulation layer in contact with sidewalls of the first doped semiconductor layers of the array of light emitting diodes,
wherein the conductive encapsulation layer comprises a polymer material, and
wherein the polymer material comprises an insulating polymer matrix, and the conductive encapsulation layer comprises conductive nanostructures.