US 12,453,219 B2
Light emitting diode and method for making the same
Bo-Yu Chen, Xiamen (CN); Yu-Tsai Teng, Xiamen (CN); and Chung-Ying Chang, Xiamen (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Hongtang Town (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on May 11, 2022, as Appl. No. 17/662,983.
Application 17/662,983 is a continuation in part of application No. PCT/CN2019/118965, filed on Nov. 15, 2019.
Prior Publication US 2022/0271205 A1, Aug. 25, 2022
Int. Cl. H10H 20/853 (2025.01); H10H 20/01 (2025.01); H10H 20/841 (2025.01); H10H 20/854 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/853 (2025.01) [H10H 20/01 (2025.01); H10H 20/841 (2025.01); H10H 20/854 (2025.01); H10H 20/857 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A light-emitting diode, comprising:
an epitaxial unit which includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between said first semiconductor layer and said second semiconductor layer in a laminating direction;
a first electrode electrically connected to said first semiconductor layer; and
a second electrode electrically connected to said second semiconductor layer;
wherein
at least one of said first electrode and said second electrode includes a first reflective layer, a wire-bonding electrode layer disposed on said first reflective layer, a second reflective layer wrapping at least a portion of said wire-bonding electrode layer, and a stress adjustment layer which wraps said first reflective layer,
at least one of said first reflective layer and said second reflective layer includes a material which has a Young's modulus of not less than 150 GPa and a bulk modulus of not less than 200 GPa,
said first reflective layer includes platinum, and said second reflective layer includes a material which has a Mohs hardness of not less than 6,
a stress direction generated from layer formation of said stress adjustment layer is opposite to a stress direction generated from layer formation of said first reflective layer,
said stress adjustment layer has a Mohs hardness of not less than 6,
said stress adjustment layer has a thickness that is 65% to 75% of a thickness of said first reflective layer; and
wherein said wire-bonding electrode layer is gold and is sandwiched between said second reflective layer and said stress adjustment layer.