US 12,453,216 B2
Diode comprising at least two passivation layers, in particular formed of dielectrics, which are locally stacked to optimise passivation
David Vaufrey, Grenoble (FR); and Corentin Le Maoult, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Appl. No. 17/788,430
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
PCT Filed Dec. 24, 2020, PCT No. PCT/EP2020/087872
§ 371(c)(1), (2) Date Jun. 23, 2022,
PCT Pub. No. WO2021/130368, PCT Pub. Date Jul. 1, 2021.
Claims priority of application No. 1915641 (FR), filed on Dec. 26, 2019.
Prior Publication US 2023/0030098 A1, Feb. 2, 2023
Int. Cl. H10H 20/84 (2025.01); H10D 8/00 (2025.01); H10D 8/01 (2025.01); H10H 20/01 (2025.01); H10F 30/21 (2025.01)
CPC H10H 20/84 (2025.01) [H10D 8/00 (2025.01); H10D 8/043 (2025.01); H10D 8/411 (2025.01); H10H 20/01 (2025.01); H10F 30/21 (2025.01); H10H 20/034 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A diode comprising:
a stack of semiconductor layers, the stack comprising a lateral surface,
an active area arranged within the stack,
a first passivation layer and a second passivation layer,
the first passivation layer being in contact with the lateral surface, the second passivation layer being in contact with the lateral surface, the second passivation layer being formed partially on the first passivation layer, the stack comprising a layer of first-type doped semiconductor material and a layer of second-type doped semiconductor material, wherein:
the first passivation layer is in contact, at the lateral surface, with the layer of first-type doped semiconductor material and the active area,
the second passivation layer is in contact, at the lateral surface, with the active area, and
the active area is arranged between the layer of first-type doped semiconductor material and the layer of second-type doped semiconductor material, or the active area is arranged at a junction between the layer of first-type doped semiconductor material and the layer of second-type doped semiconductor material.