US 12,453,211 B2
Semiconductor structures
Liyang Zhang, Jiangsu (CN); and Kai Cheng, Jiangsu (CN)
Assigned to ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Filed by ENKRIS SEMICONDUCTOR, INC., Jiangsu (CN)
Filed on May 17, 2023, as Appl. No. 18/319,460.
Claims priority of application No. 202211358853.3 (CN), filed on Nov. 1, 2022.
Prior Publication US 2024/0145626 A1, May 2, 2024
Int. Cl. H10H 20/815 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/824 (2025.01); H10H 20/831 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/815 (2025.01) [H10H 20/0133 (2025.01); H10H 20/812 (2025.01); H10H 20/819 (2025.01); H10H 20/824 (2025.01); H10H 20/8312 (2025.01); H10H 29/142 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a base, wherein the base comprises an amorphous material, and the base comprises at least one trench;
a monocrystalline layer, wherein at least part of the monocrystalline layer is in the at least one trench; and
an epitaxial structure layer, located on a side of the monocrystalline layer away from the base.