| CPC H10F 77/953 (2025.01) [G02B 6/428 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 23/53233 (2013.01); H05K 1/0209 (2013.01); H10F 77/933 (2025.01); G02B 6/4269 (2013.01); H01L 2224/48091 (2013.01)] | 12 Claims |

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1. An optoelectronic module, comprising:
a substrate having an upper surface and a pocket formed in the upper surface, the pocket extending from a first end of the substrate toward a second end of the substrate along a first direction;
a digital integrated circuit, on the upper surface of the substrate and spaced apart from the pocket along the first direction;
a photonic integrated circuit, secured in the pocket with an epoxy, the photonic integrated circuit:
extending from a first end to a second end along the first direction,
having a V-groove in an upper surface of the photonic integrated circuit at the first end, and
comprising an optoelectronic component connected to a conductive trace on the photonic integrated circuit and bonded into a cavity in the photonic integrated circuit;
an optical fiber having a first end in the V-groove, the optical fiber extending from the first end of the optical fiber away from the photonic integrated circuit and the substrate;
a fiber lid clamping the optical fiber in the V-groove;
a waveguide, for coupling light between the optical fiber and the optoelectronic component;
an analog integrated circuit secured to the upper surface of the photonic integrated circuit via a plurality of copper pillar bumps;
a heater, in or on the photonic integrated circuit; and
a wire bond between the photonic integrated circuit and the substrate, wherein the wire bond forming forms a portion of a conductive path between a conductive trace on the photonic integrated circuit and a circuit in the digital integrated circuit,
wherein a separation between a first copper pillar bump of the plurality of copper pillar bumps and a second copper pillar bump of the plurality of copper pillar bumps is less than 150 microns.
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