US 12,453,207 B2
Image sensor and method for forming the same
Jialong Li, Wuxi (CN); Ziquan Fang, Wuxi (CN); Xiao Fan, Wuxi (CN); Han Wang, Wuxi (CN); Guanglong Chen, Wuxi (CN); and Wensheng Qian, Wuxi (CN)
Assigned to Hua Hong Semiconductor (WUXI) Limited, Wuxi (CN); and Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai (CN)
Filed by HUA HONG SEMICONDUCTOR (WUXI) LIMITED, Wuxi (CN); and SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION, Shanghai (CN)
Filed on Feb. 21, 2023, as Appl. No. 18/111,990.
Claims priority of application No. 202210192656.2 (CN), filed on Feb. 28, 2022.
Prior Publication US 2023/0275164 A1, Aug. 31, 2023
Int. Cl. H10F 77/16 (2025.01); H10F 39/18 (2025.01); H10F 71/00 (2025.01); H10F 77/14 (2025.01)
CPC H10F 77/16 (2025.01) [H10F 39/18 (2025.01); H10F 71/121 (2025.01); H10F 77/147 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A method for forming an image sensor, comprising:
providing a substrate which is doped with first ions;
patterning the substrate to form a plurality of columnar structures configured in an array, wherein a first trench is configured between adjacent columnar structures which are configured along a first direction, a second trench is configured between adjacent columnar structures which are configured along a second direction, a cross trench is configured between adjacent columnar structures which are configured along a third direction, the first direction is perpendicular to the second direction, an included angle between the third direction and the first direction is 45°, an included angle between the third direction and the second direction is 45°, a side wall of each of the plurality of columnar structures perpendicular to the first direction is a (110) crystal face, and an oblique section of each of the plurality of columnar structures perpendicular to the third direction is a (100) crystal face; and
forming a doped epitaxial layer in the first trench, in the second trench and in the cross trench, wherein the first trench, the second trench and the cross trench are filled with the doped epitaxial layer which is doped with second ions, and a conductivity of the second ions is different from a conductivity of the first ions.