US 12,453,203 B2
Deep trench isolation structures resistant to cracking
Ming-Chi Wu, Kaohsiung (TW); Chun-Chieh Fang, Hsinchu (TW); Bo-Chang Su, Tainan (TW); Chien Nan Tu, Kaohsiung (TW); Yu-Lung Yeh, Kaohsiung (TW); Kun-Yu Lin, Tainan (TW); and Shih-Shiung Chen, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Apr. 11, 2022, as Appl. No. 17/658,704.
Application 17/658,704 is a division of application No. 16/120,629, filed on Sep. 4, 2018, granted, now 11,302,734.
Claims priority of provisional application 62/691,926, filed on Jun. 29, 2018.
Prior Publication US 2022/0238572 A1, Jul. 28, 2022
Int. Cl. H10F 39/00 (2025.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/762 (2006.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/807 (2025.01) [H01L 21/76224 (2013.01); H10F 39/199 (2025.01); H10F 39/8067 (2025.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/32051 (2013.01); H10F 39/18 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate;
a Deep Trench Isolation (DTI) region extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the DTI region comprises:
a dielectric layer comprising:
a first portion in the semiconductor substrate; and
a second portion higher than the semiconductor substrate, wherein the second portion of the dielectric layer overlaps the semiconductor substrate;
a diffusion barrier layer over the dielectric layer; and
a high-reflectivity metal layer between opposite portions of the dielectric layer, wherein the high-reflectivity metal layer encloses a void therein, and wherein the diffusion barrier layer is between the dielectric layer and the high-reflectivity metal layer;
pixel units with portions in the semiconductor substrate;
color filters overlapping the pixel units; and
micro lenses overlapping the color filters.