US 12,453,201 B2
Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus
Ryosuke Nakamura, Kanagawa (JP); Fumihiko Koga, Kanagawa (JP); and Taiichiro Watanabe, Kanagawa (JP)
Assigned to Sony Group Corporation, Tokyo (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP)
Filed on Oct. 19, 2023, as Appl. No. 18/490,465.
Application 18/490,465 is a continuation of application No. 17/751,331, filed on May 23, 2022.
Application 17/751,331 is a continuation of application No. 16/728,195, filed on Dec. 27, 2019, granted, now 11,424,277, issued on Aug. 23, 2022.
Application 16/728,195 is a continuation of application No. 15/448,247, filed on Mar. 2, 2017, granted, now 10,553,629, issued on Feb. 4, 2020.
Application 15/448,247 is a continuation of application No. 15/087,733, filed on Mar. 31, 2016, granted, now 9,634,047, issued on Apr. 25, 2017.
Application 15/087,733 is a continuation of application No. 14/889,552, granted, now 9,620,539, issued on Apr. 11, 2017, previously published as PCT/JP2014/002458, filed on May 9, 2014.
Claims priority of application No. 2013-104000 (JP), filed on May 16, 2013.
Prior Publication US 2024/0047490 A1, Feb. 8, 2024
Int. Cl. G01J 1/44 (2006.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/80373 (2025.01) [G01J 1/44 (2013.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/182 (2025.01); H10F 39/1825 (2025.01); H10F 39/199 (2025.01); H10F 39/8023 (2025.01); H10F 39/8033 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/811 (2025.01); H10F 39/812 (2025.01); H10F 39/813 (2025.01); G01J 2001/448 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a semiconductor substrate including a first surface side and a second surface side opposite the first surface side;
a first photoelectric conversion region disposed in the semiconductor substrate;
a floating diffusion region disposed in the semiconductor substrate;
a gate electrode configured to transfer a charge from the first photoelectric conversion region to the floating diffusion region, wherein the gate electrode includes a first part disposed in the semiconductor substrate and a second part on the first surface side of the semiconductor substrate; and
a first semiconductor region disposed in the semiconductor substrate and disposed between the first part of the gate electrode and the first photoelectric conversion region such that, in a plan view, a part of the first semiconductor region overlaps with the first part of the gate electrode,
wherein the first semiconductor region has a first width and the first photoelectric conversion region has a second width larger than the first width,
wherein the first width is an entire width of the first semiconductor region in a first direction and the second width is an entire width of the first photoelectric conversion region in the first direction, and
wherein the first semiconductor region has a conductivity type that is the same as a conductivity type of the first photoelectric conversion region.