| CPC H10F 39/8037 (2025.01) [H04N 25/772 (2023.01); H04N 25/778 (2023.01); H04N 25/79 (2023.01); H10F 39/182 (2025.01)] | 19 Claims |
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1. An image sensor, comprising:
a first layer including a plurality of photodiodes arranged in a plurality of pixel regions in a first substrate, an optical region disposed on an upper surface of the first substrate, and an element region,
wherein, in at least one of the plurality of pixel regions, the element region includes a first impurity region, a first transfer gate disposed between the first impurity region and the photodiode, a second impurity region isolated from the first impurity region, and a second transfer gate disposed between the second impurity region and the photodiode; and
a second layer including a second substrate stacked with the first layer,
wherein the second layer includes a first transistor connected to the first impurity region by a first contact, and a second transistor connected to the second impurity region by a second contact,
wherein the plurality of pixel regions are arranged in first and second directions parallel to an upper surface of the first substrate, and the first direction and the second direction are perpendicular to each other, and
wherein, in the at least one of the plurality of pixel regions, the first impurity region and the second impurity region are isolated from each other in a diagonal direction intersecting the first direction and the second direction.
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