| CPC H10F 39/802 (2025.01) [H10F 39/18 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] | 20 Claims |
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1. An imaging apparatus comprising:
a pixel region including a first semiconductor substrate section and pixels; and
a peripheral region including a second semiconductor substrate section and no pixels, wherein:
the first semiconductor substrate section and the second semiconductor substrate section are mutually different portions of a single semiconductor substrate in a plan view,
the single semiconductor substrate includes a top surface and a bottom surface opposite to the top surface,
each of the pixels includes:
a first electrode;
a second electrode;
a photoelectric conversion layer that is disposed between the first electrode and the second electrode; and
a charge accumulation region disposed in the first semiconductor substrate section,
the pixel region includes:
first through-holes that penetrate the first semiconductor substrate section from the top surface to the bottom surface of the single semiconductor substrate; and
first penetrating electrodes, each of the first penetrating electrodes being disposed in a corresponding first through-hole of the first through-holes and electrically connecting the first electrode to the charge accumulation region,
the peripheral region includes:
second through-holes that penetrate the second semiconductor substrate section from the top surface to the bottom surface of the single semiconductor substrate; and
second penetrating electrodes, each of the second penetrating electrodes being disposed in a corresponding second through-hole of the second through-holes, and
an areal density of the first penetrating electrodes that is a ratio of an area of the first penetrating electrodes to an area of the pixel region is different from an areal density of the second penetrating electrodes that is a ratio of an area of the second penetrating electrodes to an area of the peripheral region.
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