US 12,453,192 B2
Single-photon avalanche diode semiconductor device
Yu Ling Ou, Tainan (TW); Chia-Jung Hsu, Tainan (TW); Chia-Yu Wei, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 31, 2021, as Appl. No. 17/446,577.
Prior Publication US 2023/0067986 A1, Mar. 2, 2023
Int. Cl. H10F 30/225 (2025.01); H01L 21/762 (2006.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 30/225 (2025.01) [H01L 21/76224 (2013.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/807 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a single-photon avalanche diode (SPAD) arranged for illumination at a first surface of a substrate,
wherein the SPAD comprises a depletion region;
a full deep trench isolation (FDTI) structure between the SPAD and a neighboring SPAD of the semiconductor device,
wherein the FDTI structure is associated with isolating the SPAD from the neighboring SPAD,
wherein the FDTI structure includes:
a shallow trench isolation (STI) element at the first surface of the substrate, and
a deep trench isolation (DTI) element at a second surface of the substrate,
wherein the DTI element extends to the STI element;
a filter over the SPAD on the second surface of the substrate; and
a well around the STI element and partially around the DTI element,
wherein a thickness of the depletion region is approximately equal to a thickness of the well.