US 12,453,181 B2
Display device
Kyoung-Nam Lim, Gyeongsangbuk-do (KR); Yu-Ho Jung, Paju-si (KR); and Dong-Young Kim, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Jul. 11, 2022, as Appl. No. 17/861,918.
Application 17/861,918 is a continuation of application No. 16/206,785, filed on Nov. 30, 2018, granted, now 11,417,867.
Claims priority of application No. 10-2017-0175082 (KR), filed on Dec. 19, 2017.
Prior Publication US 2022/0344626 A1, Oct. 27, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 86/40 (2025.01); H10D 30/67 (2025.01); H10D 86/60 (2025.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01); H10K 59/126 (2023.01); H10K 59/131 (2023.01); H10K 71/00 (2023.01); H10K 77/10 (2023.01); H10K 59/12 (2023.01)
CPC H10D 86/423 (2025.01) [H10D 30/6723 (2025.01); H10D 30/6755 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10K 59/1213 (2023.02); H10K 59/124 (2023.02); H10K 59/126 (2023.02); H10K 59/1315 (2023.02); H10K 71/00 (2023.02); H10K 77/111 (2023.02); H10K 59/1201 (2023.02); H10K 59/131 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate comprising an active area and a bending area;
a first inorganic dielectric film on the substrate, the first inorganic dielectric film comprising at least one inorganic dielectric layer;
a first thin film transistor disposed on the first inorganic dielectric film in the active area, the first thin film transistor comprising a first semiconductor layer disposed on the first inorganic dielectric film, a first source electrode, and a first drain electrode;
a second thin film transistor disposed above the first inorganic dielectric film in the active area, the second thin film transistor comprising a second semiconductor layer, a second source electrode, and a second drain electrode;
a second inorganic dielectric film disposed between the first semiconductor layer and the second semiconductor layer, the second inorganic dielectric film comprising at least one inorganic dielectric layer including an upper buffer layer that the second semiconductor layer is disposed thereon;
a third inorganic dielectric film disposed between the second source electrode, the second drain electrode, and the second semiconductor layer, the third inorganic dielectric film comprising at least one inorganic dielectric layer;
a first source contact hole and a first drain contact hole through the second inorganic dielectric film and the third inorganic dielectric film;
a second source contact hole and a second drain contact hole through the third inorganic dielectric film; and
at least one opening disposed in the bending area, wherein the at least one opening comprises:
a first opening through the third inorganic dielectric film disposed in the bending area, the first opening exposing a part of a top surface of the upper buffer layer; and
a second opening through the first inorganic dielectric film, the second inorganic dielectric film, and the third inorganic dielectric film in the bending area, the second opening exposing the substrate.