US 12,453,150 B2
Manufacturing method for power semiconductor device using low-energy electron radiation to produce silicon-enriched layer
Giovanni Alfieri, Möriken (CH); and Gianpaolo Romano, Baden (CH)
Assigned to HITACHI ENERGY LTD, Zurich (CH)
Appl. No. 18/846,211
Filed by Hitachi Energy Ltd, Zürich (CH)
PCT Filed Jan. 30, 2023, PCT No. PCT/EP2023/052132
§ 371(c)(1), (2) Date Sep. 11, 2024,
PCT Pub. No. WO2023/174610, PCT Pub. Date Sep. 21, 2023.
Claims priority of application No. 22162144 (EP), filed on Mar. 15, 2022.
Prior Publication US 2025/0113570 A1, Apr. 3, 2025
Int. Cl. H01L 21/26 (2006.01); H01L 21/04 (2006.01); H10D 62/832 (2025.01); H10D 64/01 (2025.01)
CPC H10D 62/8325 (2025.01) [H01L 21/0475 (2013.01); H10D 64/027 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A method for producing a power semiconductor device comprising the following steps:
providing a semiconductor body based on SiC,
irradiating at least one first portion of a top side of the semiconductor body with low-energy electron radiation having a kinetic energy of at least 116 keV and at most 210 keV, by means of the low-energy electron radiation in the at least one first portion carbon atoms are moved from the top side into the semiconductor body so that after irradiating the at least one first portion, there the semiconductor body has a layer of Si0.5+xC0.5−x, wherein x is at least 0.001 and is at most 0.1, said layer has a thickness of at least 10 nm and of at most 0.2 μm, and
producing an electrical insulation layer at least in the at least one irradiated first portion, wherein the electrical insulation layer is of SiO2.