US 12,453,130 B2
Semiconductor device and method for manufacturing semiconductor device
Akio Suzuki, Atsugi (JP); and Haruyuki Baba, Isehara (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 17/617,411
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
PCT Filed Jun. 5, 2020, PCT No. PCT/IB2020/055298
§ 371(c)(1), (2) Date Dec. 8, 2021,
PCT Pub. No. WO2020/254904, PCT Pub. Date Dec. 24, 2020.
Claims priority of application No. 2019-115134 (JP), filed on Jun. 21, 2019; and application No. 2019-158306 (JP), filed on Aug. 30, 2019.
Prior Publication US 2022/0254932 A1, Aug. 11, 2022
Int. Cl. H10D 30/67 (2025.01); H10D 30/01 (2025.01)
CPC H10D 30/6755 (2025.01) [H10D 30/031 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first conductor over the substrate;
a first metal oxide over the first conductor;
a first oxide over and in contact with the first metal oxide;
a second oxide over the first oxide;
a first insulator over the second oxide;
a second conductor over the first insulator;
a second insulator over the second conductor;
a third insulator in contact with a side surface of the second conductor, a side surface of the first insulator, and a side surface of the second insulator;
a second metal oxide over the second oxide, the second insulator, and the third insulator; and
a third conductor over the second metal oxide, the third conductor being in contact with a top surface of the second metal oxide,
wherein the second conductor comprises a region overlapping with the second oxide,
wherein the third conductor comprises a region in contact with the second metal oxide,
wherein the second metal oxide comprises a region in contact with the second oxide,
wherein a carrier concentration of the second oxide is lower than a carrier concentration of the first oxide,
wherein a carrier concentration of the first metal oxide is higher than the carrier concentration of the first oxide, and
wherein a carrier concentration of the second metal oxide is higher than the carrier concentration of the first oxide.