| CPC H10D 30/6735 (2025.01) [H01L 23/481 (2013.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 84/856 (2025.01); H10D 88/00 (2025.01)] | 19 Claims |
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1. A semiconductor device comprising:
a substrate;
a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain contact connected to the first active pattern on a side surface of the first gate electrode;
a second transistor disposed on an upper surface of the first transistor, the second transistor comprising a second active pattern including a second two-dimensional semiconductor material, a second gate electrode through which the second active pattern penetrates, and a second source/drain contact connected to the second active pattern on a side surface of the second gate electrode; and
a first wiring structure interposed between the first transistor and the second transistor, and electrically connecting the first transistor and the second transistor,
wherein the first transistor and the second transistor have different conductive types from each other.
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