| CPC H10D 30/6735 (2025.01) [H01L 23/5226 (2013.01); H10D 30/6757 (2025.01); H10D 84/83 (2025.01)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate that includes a peripheral region and a logic cell region;
a first active pattern disposed on the peripheral region;
a first source/drain pattern disposed on the first active pattern;
a first channel pattern formed on the first active pattern and connected to the first source/drain pattern, wherein the first channel pattern includes semiconductor patterns that are stacked and spaced apart from each other;
a first gate electrode that extends in a first direction and crosses the first channel pattern;
a gate insulating layer interposed between the first gate electrode and the first channel pattern;
a first gate contact disposed on the first gate electrode and that extends in the first direction;
a first dielectric layer interposed between the first gate electrode and the first gate contact such that the first gate electrode and the first gate contact are electrically insulated from each other by the first dielectric layer;
a third active pattern and a fourth active pattern that are disposed on the logic cell region and are spaced apart from each other in the first direction;
a third source/drain pattern and a fourth source/drain pattern disposed on the third and fourth active patterns, respectively;
a third channel pattern and a fourth channel pattern disposed on the third and fourth active patterns, respectively, and connected to the third and fourth source/drain patterns, respectively, wherein each of the third and fourth channel patterns includes semiconductor patterns that are stacked and spaced apart from each other,
a second gate electrode that extends in the first direction and crosses the third and fourth channel patterns; and
a second gate contact electrically connected to the second gate electrode,
wherein the first dielectric layer is interposed between a bottom surface of the first gate contact and a top surface of the first gate electrode and extends in the first direction.
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