US 12,453,117 B2
Source/drain region of a semiconductor device having an oxygen doped barrier layer formed between first and second epitaxial layers
Sangmoon Lee, Suwon-si (KR); Jinbum Kim, Seoul (KR); and Dongsuk Shin, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Mar. 31, 2022, as Appl. No. 17/709,940.
Claims priority of application No. 10-2021-0113698 (KR), filed on Aug. 27, 2021.
Prior Publication US 2023/0065755 A1, Mar. 2, 2023
Int. Cl. H01L 29/417 (2006.01); H10D 30/62 (2025.01); H10D 62/815 (2025.01)
CPC H10D 30/6219 (2025.01) [H10D 30/6211 (2025.01); H10D 62/8164 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an active region extending on a substrate in a first direction;
a gate structure intersecting the active region and extending on the substrate in a second direction; and
a source/drain region on the active region on at least one side of the gate structure,
wherein the source/drain region comprises a first epitaxial layer and a second epitaxial layer stacked on the active region; and
an oxygen-doped barrier layer adjacent to at least one of the first epitaxial layer and the second epitaxial layer.
 
6. A semiconductor device, comprising:
an active region extending on a substrate in a first direction;
a gate structure intersecting the active region and extending on the substrate in a second direction; and
a source/drain region on the active region on at least one side of the gate structure,
wherein the source/drain region includes:
a first epitaxial layer on the active region, the first epitaxial layer comprising impurities of a first conductivity type in a first concentration;
a second epitaxial layer on the first epitaxial layer, the second epitaxial layer comprising impurities of the first conductivity type in a second concentration; and
a first barrier layer between the first epitaxial layer and the second epitaxial layer, the first barrier layer comprising doped oxygen.
 
19. A semiconductor device, comprising:
an active region extending on a substrate in a first direction;
a gate structure intersecting the active region and extending on the substrate in a second direction; and
a source/drain region on the active region on at least one side of the gate structure,
wherein the source/drain region comprises at least two or more epitaxial layers on the active region, wherein at least one of the two or more epitaxial layers is doped with impurities of a different concentration than a concentration of at least one other epitaxial layer of the two or more epitaxial layers, and
wherein at least one of the epitaxial layers is provided in a superlattice structure, the superlattice structure comprising oxygen.