US 12,453,109 B2
Semiconductor device
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Sep. 10, 2024, as Appl. No. 18/830,089.
Application 18/830,089 is a continuation in part of application No. 18/628,178, filed on Apr. 5, 2024.
Application 18/628,178 is a continuation in part of application No. 18/394,688, filed on Dec. 22, 2023, granted, now 12,074,195, issued on Aug. 27, 2024.
Claims priority of provisional application 63/584,661, filed on Sep. 22, 2023.
Prior Publication US 2025/0107120 A1, Mar. 27, 2025
Int. Cl. H10D 8/60 (2025.01); H10D 8/01 (2025.01); H10D 62/40 (2025.01); H10D 62/832 (2025.01)
CPC H10D 8/60 (2025.01) [H10D 8/051 (2025.01); H10D 62/40 (2025.01); H10D 62/8325 (2025.01)] 4 Claims
OG exemplary drawing
 
1. A multilayered semiconductor diode device comprising:
a substrate comprising silicon carbide (SiC);
an epitaxial drift layer comprising a first semiconductor oxide material, wherein the epitaxial drift layer is above the substrate with respect to a growth direction;
a polar nitride layer comprising a polar semiconductor nitride material, wherein the polar nitride layer is above the epitaxial drift layer with respect to the growth direction; and
a metal layer above the polar nitride layer with respect to the growth direction;
wherein the epitaxial drift layer is doped n-type, wherein a polarization axis of the polar semiconductor nitride material is aligned with the growth direction such that the polar nitride layer comprises p-type charge, and wherein the polar nitride layer and the epitaxial drift layer form a p/n junction.