US 12,453,102 B2
Vertical memory devices
Sunil Kumar Singh, Mechanicville, NY (US); Xuan Anh Tran, Boise, ID (US); Eswar Ramanathan, Mechanicville, NY (US); Suryanarayana Kalaga, Mechanicville, NY (US); Craig M. Child, Gansevoort, NY (US); and Robert Fox, Greenfield Center, NY (US)
Assigned to GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Malta, NY (US)
Filed on May 12, 2022, as Appl. No. 17/742,525.
Application 17/742,525 is a division of application No. 16/439,101, filed on Jun. 12, 2019, granted, now 11,367,750.
Prior Publication US 2022/0271090 A1, Aug. 25, 2022
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 63/80 (2023.02) [H10B 63/845 (2023.02); H10N 70/066 (2023.02); H10N 70/24 (2023.02); H10N 70/821 (2023.02); H10N 70/826 (2023.02); H10N 70/8418 (2023.02); H10N 70/883 (2023.02); H10N 70/8833 (2023.02); H10N 70/8836 (2023.02)] 9 Claims
OG exemplary drawing
 
1. A method comprises:
forming a bottom electrode on a bottom metallization feature;
forming an etch stop layer contacting a lower portion of sidewalls of the bottom electrode;
forming switching material about sidewalls and an upper surface of the bottom electrode and on top of the etch stop layer;
forming top electrode material on the switching material;
patterning the switching material and the top electrode material to form a first top electrode comprising the top electrode material and a second top electrode of a two bit cell with the bottom electrode common to both the first top electrode and the second top electrode, wherein the patterning of the switching material removes the switching material from the upper surface of the bottom electrode and over portions of the etch stop layer such that the switching material is sandwiched between the sidewalls of the bottom electrode and the first electrode and sandwiched between the sidewalls of the bottom electrode and the second electrode;
forming an additional etch stop layer lining sidewalls of the first top electrode and the second top electrode, and contacting a portion of the switching material such that the first electrode and the second electrode are sandwiched between the additional etch stop layer and the switching material;
forming a first contact partially extending over and contacting a top surface of the first top electrode, and further contacting a top surface of the additional etch stop layer; and
forming a second contact partially extending over and contacting a top surface of the second top electrode, and further contacting the top surface of the additional etch stop layer.