US 12,453,101 B2
Phase change material switch circuit for enhanced signal isolation and methods of forming the same
Wei Ting Hsieh, Hsinchu (TW); Kuo-Ching Huang, Hsinchu (TW); Yu-Wei Ting, Taipei (TW); Kuo-Pin Chang, Zhubei (TW); and Hung-Ju Li, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on May 23, 2023, as Appl. No. 18/321,898.
Prior Publication US 2024/0397733 A1, Nov. 28, 2024
Int. Cl. H10B 63/10 (2023.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01)
CPC H10B 63/10 (2023.02) [G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H10B 63/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device structure comprising a first series connection of a first phase change memory (PCM) switch and a second PCM switch, wherein:
the first PCM switch comprises a first phase change material (PCM) line, a first contact electrode located on a first end of the first PCM line, and a second contact electrode located on a second end of the first PCM line;
the second PCM switch comprises a second PCM line, a third contact electrode located on a first end of the second PCM line, and a fourth contact electrode located on a second end of the second PCM line;
the second contact electrode is electrically connected to the third contact electrode;
the fourth contact electrode is electrically grounded;
one of the first contact electrode and the second contact electrode comprises a signal input port;
another of the first contact electrode and the second contact electrode comprises a signal output port;
the first PCM line and the second PCM line have a same height;
the first PCM line has a first width;
the second PCM line has a second width; and
the first width is greater than the second width.