US 12,453,100 B2
Magnetic memory device
Naoki Akiyama, Seoul (KR); Kenichi Yoshino, Seongnam-si (KR); Kazuya Sawada, Seoul (KR); Hyungjun Cho, Seoul (KR); and Takuya Shimano, Seoul (KR)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 12, 2022, as Appl. No. 17/943,160.
Claims priority of application No. 2022-038150 (JP), filed on Mar. 11, 2022.
Prior Publication US 2023/0292529 A1, Sep. 14, 2023
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/10 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element, wherein
the switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode,
the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material,
each of the plurality of memory cells further includes a protective insulating layer which covers a side surface of the magnetoresistance effect element and a side surface of the first portion, and
the protective insulating layer does not cover a side surface of the second portion.