US 12,453,099 B2
Integrated assemblies and methods of forming integrated assemblies
Giorgio Servalli, Fara Gera d'Adda (IT); and Marcello Mariani, Milan (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 31, 2024, as Appl. No. 18/680,742.
Application 18/680,742 is a continuation of application No. 17/379,012, filed on Jul. 19, 2021, granted, now 12,035,536.
Prior Publication US 2024/0324236 A1, Sep. 26, 2024
Int. Cl. H10B 51/50 (2023.01); H01L 25/065 (2023.01); H10D 30/67 (2025.01); H10B 53/30 (2023.01)
CPC H10B 51/50 (2023.02) [H01L 25/0655 (2013.01); H10D 30/6728 (2025.01); H10B 53/30 (2023.02)] 26 Claims
OG exemplary drawing
 
1. A capacitor, comprising:
a bottom electrode;
a top electrode;
an insulative material between the top electrode and the bottom electrode; and
a leaker device extending to the bottom electrode and to the top electrode, the entire structure of the leaker device is in a single plane.