US 12,453,091 B2
Method of fabricating integrated circuit device and method of fabricating electronic system having the same
Sangmin Kang, Hwaseong-si (KR); Hyungjoon Kim, Yongin-si (KR); and Woojin Jang, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on May 4, 2022, as Appl. No. 17/736,173.
Claims priority of application No. 10-2021-0125208 (KR), filed on Sep. 17, 2021.
Prior Publication US 2023/0087072 A1, Mar. 23, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A method of fabricating an integrated circuit device, the method comprising:
forming on a semiconductor substrate a mold stack that includes a plurality of insulating layers and a plurality of mold layers alternately arranged;
forming on the mold stack a mask pattern including an opening;
forming a channel hole by removing the mold stack exposed through the opening;
forming a sacrificial film on a lateral wall of the mold stack exposed through the channel hole;
performing an oxidation process on the sacrificial film and the mold stack to convert the sacrificial film to a sacrificial oxide film;
performing an etching process to remove the sacrificial oxide film;
after the performing of the etching process, forming a channel structure filling the channel hole;
forming a word line cut opening by removing a portion of the mold stack to expose an upper surface of the semiconductor substrate; and
substituting the plurality of mold layers with a plurality of gate electrodes through the word line cut opening.