US 12,453,088 B2
Three-dimensional memory device including discrete charge storage elements and methods of forming the same
Kartik Sondhi, Milpitas, CA (US); Raghuveer S. Makala, Campbell, CA (US); Adarsh Rajashekhar, Santa Clara, CA (US); Rahul Sharangpani, Fremont, CA (US); and Fei Zhou, San Jose, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Dec. 22, 2022, as Appl. No. 18/145,275.
Application 18/145,275 is a continuation in part of application No. 17/543,987, filed on Dec. 7, 2021, granted, now 12,267,998.
Application 17/543,987 is a continuation in part of application No. 17/090,420, filed on Nov. 5, 2020, granted, now 11,659,711.
Application 17/090,420 is a continuation in part of application No. 16/849,600, filed on Apr. 15, 2020, granted, now 11,387,244, issued on Jul. 12, 2022.
Prior Publication US 2023/0128682 A1, Apr. 27, 2023
Int. Cl. H10B 41/30 (2023.01); G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 41/27 (2023.02) [G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 17 Claims
OG exemplary drawing
 
1. A memory device, comprising:
an alternating stack of insulating layers and electrically conductive layers;
an insulating cap layer that overlies the alternating stack;
a memory opening vertically extending through the alternating stack and the insulating cap layer; and
a memory opening fill structure located in the memory opening and comprising a vertical semiconductor channel, a memory film, and a drain region comprising a doped semiconductor material contacting an end portion of the vertical semiconductor channel and having a top surface located within a horizontal plane including a top surface of the insulating cap layer,
wherein the memory film comprises a memory material layer consisting essentially of silicon nitride and having a straight inner cylindrical sidewall that continuously vertically extends through a plurality of electrically conductive layers within the alternating stack and through the insulating cap layer without lateral undulation and a laterally-undulating outer sidewall having outward lateral protrusions at levels of the plurality of electrically conductive layers, wherein a topmost outward lateral protrusion of the laterally-undulating outer sidewall of the memory material layer is located at a level of a topmost electrically conductive layer of the electrically conductive layers, and laterally protrudes outward relative to a topmost vertically-extending segment of the laterally-undulating outer sidewall located at a level of the insulating cap layer, wherein an entirety of the straight inner cylindrical sidewall consists essentially of the silicon nitride, and an entirety of the laterally-undulating outer sidewall consists essentially of the silicon nitride.