US 12,453,079 B2
Method of manufacturing semiconductor structure comprising edge word line and central word line
Yu-Ting Lin, New Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 1, 2023, as Appl. No. 18/204,548.
Application 18/204,548 is a division of application No. 17/879,971, filed on Aug. 3, 2022, granted, now 12,317,482.
Prior Publication US 2024/0049452 A1, Feb. 8, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/34 (2023.02) [H10B 12/053 (2023.02)] 3 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
providing a sacrificial structure disposed on a substrate;
removing portions of the sacrificial structure to form a plurality of central openings, at least one edge opening and a plurality of pillars spaced apart from each other;
forming a first material layer to cover the plurality of pillars, the plurality of central openings and a portion of the at least one edge opening, wherein a thickness of the first material layer is less than a height of the plurality of pillars; and
forming at least one edge word line on the substrate through the at least one edge opening and forming a plurality of central word lines on the substrate;
wherein after forming the first material layer, the method further comprises:
removing portions of the first material layer to expose top surfaces of the plurality of pillars and to form at least one through hole in the at least one edge opening;
wherein after exposing the top surfaces of the plurality of pillars, the method further comprises:
removing the plurality of pillars to form a plurality of grooves, wherein the plurality of grooves includes a plurality of central grooves and a plurality of edge grooves, and the at least one through hole is between the plurality of central grooves and the plurality of edge grooves;
wherein the central word lines are on the substrate through the central grooves;
wherein after forming the plurality of grooves, the method further comprises:
forming a second material layer to cover the plurality of edge grooves;
wherein after forming the second material layer, the method further comprises:
forming at least one edge trench on the substrate through the at least one through hole and forming a plurality of central trenches on the substrate through the plurality of central grooves, wherein a width of the at least one edge trench is greater than a width of the plurality of central trenches.