US 12,453,075 B2
Word line structure, manufacturing method thereof and semiconductor memory
ChihCheng Liu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jul. 27, 2021, as Appl. No. 17/386,499.
Application 17/386,499 is a continuation of application No. PCT/CN2021/079666, filed on Mar. 9, 2021.
Claims priority of application No. 202010216024.6 (CN), filed on Mar. 25, 2020.
Prior Publication US 2021/0358916 A1, Nov. 18, 2021
Int. Cl. H01L 27/108 (2006.01); G11C 8/14 (2006.01); H10B 12/00 (2023.01)
CPC H10B 12/30 (2023.02) [G11C 8/14 (2013.01); H10B 12/488 (2023.02)] 15 Claims
OG exemplary drawing
 
1. A word line structure, comprising:
a first word line array, comprising a plurality of first word lines extending in an X direction, the plurality of first word lines having a same length and being aligned and arranged in a Y direction; and
a second word line array, comprising a plurality of second word lines extending in the X direction, the plurality of second word lines having a same length and being aligned and arranged in the Y direction,
wherein the first word line array and the second word line array are not aligned in the Y direction, and the Y direction is perpendicular to the X direction; and, wherein
the plurality of first word lines have first word line contact structures on a positive side of an X-axis, wherein the X direction extends along the X-axis, and the plurality of second word lines have second word line contact structures on a negative side of the X-axis, wherein the X direction extends along the X-axis; or
the plurality of first word lines have first word line contact structures on a negative side of the X-axis, wherein the X direction extends along the X-axis, and the plurality of second word lines have second word line contact structures on a positive side of the X-axis, wherein the X direction extends along the X-axis; and
the first word line contact structures and the second word line contact structures each have a T-shaped cross-section, the T-shaped cross-section parallel to the X direction and the Y directions, adjacent T-shaped first word line contact structures in the Y direction are arranged in opposite directions, adjacent T-shaped second word line contact structures in the Y direction are arranged in opposite directions.