| CPC H04N 25/77 (2023.01) | 20 Claims |
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1. A pixel, comprising:
a silicon substrate;
a photodiode formed in the substrate;
a first shallow trench isolation formed in the substrate, the first shallow trench isolation being filled with silicon oxide and at least partially positioned between the photodiode and a first boundary of the pixel in a horizontal dimension of the pixel; and
an anti-blooming (AB) transistor, wherein the AB transistor includes:
a gate formed by polysilicon positioned inside a portion of the silicon oxide of the first shallow trench isolation; and
a drain positioned outside the portion of the silicon oxide of the first shallow trench isolation, the drain being isolated from the gate by the silicon oxide.
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