| CPC H04N 25/59 (2023.01) [H04N 25/532 (2023.01); H04N 25/65 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01)] | 20 Claims |
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1. An image sensor element, comprising:
a photosensitive region configured to generate charge in response to incident light on the image sensor element;
a charge storage region configured to store at least a portion of the charge generated by the photosensitive region;
a first actuating element electrically coupling the photosensitive region to the charge storage region, the first actuating element configured to enable charge transfer from the photosensitive region to the charge storage region according to a transfer control signal;
a floating diffusion region coupled to the first actuating element;
a second actuating element responsive to a gain control signal, the second actuating element having a first node connected to the floating diffusion region;
a third actuating element responsive to a reset control signal, the third actuating element having a first node coupled to a second node of the second actuating element, and a second node coupled to a voltage supply;
a capacitor having a first node connected to the second node of the second actuating element, the capacitor being operatively coupled to the first node of the third actuating element; and
readout control circuitry configured to read out charge stored in the charge storage region and charge stored by the capacitor;
wherein:
the second actuating element, in response to the gain control signal, is configured to electrically couple the capacitor to the floating diffusion region to receive a saturated portion of the charge generated by the photosensitive region;
integration for imaging is time-gated to correspond with a pulsed light source to achieve a selected distance range detectable by the image sensor element; and
a high dynamic range image is constructable from the read out of the charge stored in the charge storage region and the charge stored by the capacitor according to the time-gated integration.
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